Class 11 XiaoDong Week 6-7
It has become a vital method and developtrend in electronic devices' reliability designing method that usingreliability simulation technology to set up virtual device and calculating themicroelectronic devices' using reliability[1]. However, most ofcommon physics-of-failure models only allowed to input single parameter whilereal environment may provide complex multi-level stress profile. In thatcircumstance the physics-of-failure model would fail in receiving and calculatingthe profile, which brings a technical problem in simulating and assessingmicro-electronic devices' using reliability. To solve this problem somescientists used fatigue damage accumulation theory and establishedphysics-of-failure model for electro-migration damage accumulation undermulti-level stress profile[2], which can achieve simulation andprediction of cycle time before failure under multi-level thermal stressprofile.
[1] Black J R.Electro-migration failure modes in aluminum metallization for semiconductordevices[J]. Microelectronics Reliability, 1970, 9(5): 381.
[2] Best G E,Bretts G R, Mclean H T, Lampert H M. The determination and analysis of agingmechanisms in accelerated testing of selected semiconductors, capacitors andresistor [C]. Third Annual Symposium on the Physics of Failure in Electronics,1964,61-80.
It has become a vital method and developtrend in electronic devices' reliability designing method that usingreliability simulation technology to set up virtual device and calculating themicroelectronic devices' using reliability[1]. However, most ofcommon physics-of-failure models only allowed to input single parameter whilereal environment may provide complex multi-level stress profile. In thatcircumstance the physics-of-failure model would fail in receiving and calculatingthe profile, which brings a technical problem in simulating and assessingmicro-electronic devices' using reliability. To solve this problem somescientists used fatigue damage accumulation theory and establishedphysics-of-failure model for electro-migration damage accumulation undermulti-level stress profile[2], which can achieve simulation andprediction of cycle time before failure under multi-level thermal stressprofile.
[1] Black J R.Electro-migration failure modes in aluminum metallization for semiconductordevices[J]. Microelectronics Reliability, 1970, 9(5): 381.
[2] Best G E,Bretts G R, Mclean H T, Lampert H M. The determination and analysis of agingmechanisms in accelerated testing of selected semiconductors, capacitors andresistor [C]. Third Annual Symposium on the Physics of Failure in Electronics,1964,61-80.
